4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)
Specifications:
| Grade | Production Grade | Research Grade | Dummy Grade |
| Polytype | 4H | ||
| Diameter | 100.0 mm +/- 0.5 mm | ||
| Thickness | 500 um +/- 25 um | ||
| Wafer Orientation | On axis: +/- 0.5 deg | On axis: +/- 2.0 deg | |
| Micropipe Density for 95% of Wafers (MPD) | ≤ 1 cm-2 | ≤ 5 cm-2 | ≤ 10 cm-2 |
| Electrical Resistivity | ≥ 1E10 | ≥ 1E5 | ≥ 1E5 |
| Dopant | Undoped | ||
| Primary Flat Orientation | {1-100} +/- 5.0 deg | ||
| Primary Flat Length | 32.5 mm +/- 3.0 mm | ||
| Secondary Flat Length | 18.0 mm +/- 2.0 mm | ||
| Secondary Flat Orientation | Silicon face up: 90 deg CW from primary flat +/- 5.0 deg | ||
| Edge Exclusion | 3 mm | ||
| LTV/TTV/Bow/Warp | 3 um /10 um / ±30 um /40 um (Production Grade and Research Grade) | ||
| 5 um /15 um / ±40 um /45 um (Dummy Grade) | |||
| Surface Roughness | C-face: Polished |
||
| Si-face: CMP | |||
| Cracks (inspected by high intensity light) | None | None | None |
| Hex Plates (inspected by high intensity light*) | None | None | Cumulative area 10% |
| Polytype Areas (inspected by high intensity light*) | Cumulative area 5% | Cumulative area 20% | Cumulative area 30% |
| Scratches (inspected by high intensity light) | ≤ 5 scratches and cumulative length ≤ 150 mm | ≤ 10 scratches and cumulative length ≤ 200 mm | |
| Edge Chipping | None permitted ≥ 0.5 mm width and depth | 2 allowed, ≤ 1 mm width and depth | 5 allowed, ≤ 5 mm width and depth |
| Surface Contamination (inspected by high intensity light) | None | ||
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
|
Property |
4H-SiC Single Crystal |
|
Lattice Parameters (Å) |
a=3.076 c=10.053 |
|
Stacking Sequence |
ABCB |
|
Density |
3.21 |
|
Mohs Hardness |
~9.2 |
|
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
|
Refraction Index @750 nm |
no = 2.61 ne = 2.66 |
|
Dielectric Constant |
c ~ 9.66 |
|
Doping Type |
Undoped Semi-insulating |
|
Thermal Conductivity (W/cm-K @298 K) (Semi-insulating type) |
a~4.9 c~3.9
|
|
Band-gap (eV) |
3.23 |
|
Break-Down Electrical Field (V/cm) |
3-5 x 106 |
|
Saturation Drift Velocity (m/s) |
2.0 x 105 |
|
Wafer and Substrate Sizes |
Wafers: 4, 6 inch; other sizes are available and can be custom-made upon request |
|
Product Grades |
A Grade Production grade (MPD 1 cm-2) B Grade Research grade (MPD 5 cm-2) C Grade Dummy grade (MPD 10 cm-2) |
Price
NANOSSR offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.
